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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3574
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3574 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
5 ORDERING INFORMATION
PART NUMBER 2SK3574 2SK3574-S 2SK3574-ZK 2SK3574-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMDNote
FEATURES
*4.5V drive available *Low on-state resistance RDS(on)1 = 13.5 m MAX. (VGS = 10 V, ID = 24 A) *Low gate charge QG = 22 nC TYP. (VDD = 24 V, VGS = 10 V, ID = 48 A) *Built-in gate protection diode *Avalanche capability ratings *Surface mount device available
Note TO-220SMD package is produced only in Japan.
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
30 20 48 140 1.5 29 150 -55 to +150 19 36
V V A A W W C C A mJ
Total Power Dissipation (TA = 25C) Total Power Dissipation (TC = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes 1. PW 10 s, Duty Cycle 1% 2. Starting Tch = 25C, VDD = 15 V, RG = 25 , VGS = 20 0 V
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D16260EJ2V0DS00 (2nd edition) Date Published September 2002 NS CP(K) Printed in Japan
The mark ! shows major revised points.
(c)
2002
2SK3574
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 24 V VGS = 10 V ID = 48 A IF = 48 A, VGS = 0 V IF = 48 A, VGS = 0 V di/dt = 100 A/s TEST CONDITIONS VDS = 30 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 24 A VGS = 10 V, ID = 24 A VGS = 4.5 V, ID = 15 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 15 V, ID = 24 A VGS = 10 V RG = 10 1.5 7.0 10.1 15 940 245 170 12 18 39 12 22 3.8 7 1.1 29 24.8 13.5 24 MIN. TYP. MAX. 10 10 2.5 UNIT
A A
V S m m pF pF pF ns ns ns ns nC nC nC V ns nC
5
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG
VGS RL VDD VDS
90% 90% 10% 10%
VGS
Wave Form
0
10%
VGS
90%
BVDSS IAS ID VDD VDS
VGS 0 = 1 s Duty Cycle 1%
VDS
VDS
Wave Form
0 td(on) ton
tr
td(off) toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet D16260EJ2V0DS
2SK3574
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - %
120
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
40
PT - Total Power Dissipation - W
100
30
80
60
20
40
10
20
0 0 25 50 75 100 125 150 175
0 0 25 50 75 100 125 150 175
TC - Case Temperature - C TC - Case Temperature - C
FORWARD BIAS SAFE OPERATING AREA
1000 T C = 25C Single pulse
ID(pulse)
ID - Drain Current - A
100
RDS(on) Lim ited
PW = 10 s
10
ID(DC) DC
100 s
1 ms 10 m s
1
Power Disspasion Lim ited
0.1 0.1 1 10 100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
rth(t) - Transient Thermal Resistance - C/W
Rth(ch-A) = 83.3C/W
10
Rth(ch-C) = 4.31C/W
1
0.1
Single pulse
0.01 10
100
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D16260EJ2V0DS
3
2SK3574
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
150 100
FORWARD TRANSFER CHARACTERISTICS
ID - Drain Current - A
ID - Drain Current - A
VGS = 10 V
10
100
1
Tch = 150C 75C 25C -55C
50
4.5 V
0.1
VDS = 10 V Pulsed
Pulsed
0 0 1 2 3
0.01 0 1 2 3 4 5
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE | yfs | - Forward Transfer Admittance - S
3 100
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
VDS = 10 V Pulsed
VGS(off) - Gate Cut-off Voltage - V
VDS = 10 V ID = 1 mA
2.5 2 1.5 1 0.5 0 -50 0 50 100 150
10
Tch = 150C 75C 25C -55C
1
0.1 0.1 1 10 100
Tch - Channel Temperature - C
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - m
30
Pulsed
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
30
Pulsed
25 20
VGS = 4.5 V
25 20 15
ID = 24 A
15 10
10 V
10 5 0 0 5 10 15 20
5 0 1 10 100 1000
ID - Drain Current - A
VGS - Gate to Source Voltage - V
4
Data Sheet D16260EJ2V0DS
2SK3574
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE
25
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10 00 0
20
VGS =4.5 V
Ciss, Coss, Crss - Capacitance - pF
ID = 24 A Pulsed
VGS = 0 V f = 1 MHz C iss
10 00
C oss
15
10 10 V 5
10 0
C rs s
0 -50 0 50 100 150
10 0.01
0.1
1
10
10 0
Tch - Channel Temperature - C
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
30 12
VDS - Drain to Source Voltage - V
25
100 td(off) tr td(on) 10 tf
20
VDD = 24 V 15 V 6V
10
8
15 VGS 10 VDS ID = 48 A
6
4
5
2
1 0.1 1 10 100
0 0 5 10 15 20 25
0
ID - Drain Current - A
QG - Gate Change - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000 VGS = 10 V 100 1000
REVERSE RECOVERY TIME vs. DRAIN CURRENT
di/dt = 100 A/m s VGS = 0 V
trr - Reverse Recovery Time- ns
IF - Diode Forward Current - A
100
10 0V 1
10
0.1 Pulsed 0.01 0 0.5 1 1.5
1 0.1 1 10 100
VF(S-D) - Source to Drain Voltage - V
ID - Drain Current - A
Data Sheet D16260EJ2V0DS
5
VGS - Gate to Source Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
VDD = 15 V VGS = 10 V R G = 10
2SK3574
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD
100 120
SINGLE AVALANCHE ENERGY DERATING FACTOR
VDD = 15 V RG = 25 VGS = 20 0 V IAS 19 A
IAS - Single Avalanche Current - A
Energy Derating Factor - %
IAS = 19 A 10 EAS = 36 m J
100 80 60 40 20 0
1 VDD = 15 V RG = 25 VGS = 20 0 V Starting Tch = 25C 0.1 0.01 0.1 1 10
25
50
75
100
125
150
L - Inductive Load - mH
Starting Tch - Starting Channel Temperature - C
6
Data Sheet D16260EJ2V0DS
2SK3574
5
PACKAGE DRAWINGS (Unit: mm)
1)
3.00.3
TO-220AB(MP-25)
10.6 MAX. 10.0 TYP. 4.8 MAX.
2)
TO-262(MP-25 Fin Cut)
1.00.5
3.60.2
5.9 MIN.
4.8 MAX. 1.30.2
1.30.2
10 TYP.
15.5 MAX.
4 1 2 3
4 123
6.0 MAX.
1.30.2
1.30.2
12.7 MIN.
12.7 MIN.
8.50.2
0.750.3 2.54 TYP.
0.50.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.80.2
0.750.1 2.54 TYP.
0.50.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.80.2
3)
TO-263(MP-25ZK)
10.00.2
4)
1.350.3
4.450.2 1.30.2
TO-220SMD(MP-25Z)
10 TYP. 4
Note
4.8 MAX. 1.30.2
No plating
0.4 8.4 TYP. 4
1.00.5
8.0 TYP.
9.150.2
15.250.5
0.025 to 0.25
1 1.40.2
2.450.25
2
3
1.10.4
0.750.3 2.54 TYP.
P. TY P. R Y 0.5 R T 0.8 2.54 TYP.
3.00.5
8.50.2
0.50.2
0.5
0.70.15 2.54 1 2 3
0.2 8o
0 to
0.25 1.Gate 2.Drain 3.Source
2.5
4.Fin (Drain)
Note This package is produced only in Japan. EQUIVALENT CIRCUIT
Drain
Remark
Gate Body Diode
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
Gate Protection Diode
Source
may be applied to this device.
2.80.2
1.Gate 2.Drain 3.Source 4.Fin (Drain)
Data Sheet D16260EJ2V0DS
7
2SK3574
* The information in this document is current as of September, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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